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Typical Performance Curves
APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL
1000V
8A 1.60
D3PAK
POWER MOS 7
(R)
R
FREDFET
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT1001R6BFLL_SFLL UNIT Volts Amps
1000 8 32 30 40 266 2.13 -55 to 150 300 4 16
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 1.600 250 1000 100 3 5
(VGS = 10V, ID = 4A)
Ohms A nA Volts
4-2004 050-7126 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1001R6BFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 8A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 8A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V VGS = 15V ID = 8A, RG = 5 VDD = 667V VGS = 15V ID = 8A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
1320 230 42 55 7 35 18 18 32 19 210 40 450 50
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
INDUCTIVE SWITCHING @ 125C
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
8 32 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -8A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -8A, di/dt = 100A/s) Reverse Recovery Charge (IS = -8A, di/dt = 100A/s) Peak Recovery Current (IS = -8A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 515 0.50 1.1 8.3 11.5
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.47 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.50
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 13.28mH, RG = 25, Peak IL = 8A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ID-8A di/dt 700A/s VR 1000 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9
0.7
0.5
Note:
PDM t1 t2
4-2004
0.3
JC
050-7126 Rev A
Z
0.1 0.05 10-4 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
18 16 14 12 10 8 6 4 2 0 VGS =15,10 & 7.5V
APT1001R6BFLL_SFLL
7V 6.5V
RC MODEL Junction temp. ( "C) 0.205 Power (Watts) 0.264 Case temperature 0.0981F 0.00544F
6V
5.5V 5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 20 18
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40 1.30 1.20
NORMALIZED TO = 10V 4A V
GS
16 14 12 10 8 6 4 2 0
TJ = -55C TJ = +125C TJ = +25C
VGS=10V 1.10 1.00 0.90 0.80 VGS=20V
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
2 4 6 8 10 12 14 16 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
7 6 5 4 3 2 1 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
8
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I V
D
= 4A = 10V
GS
2.0
1.1 1.0 0.9 0.8 0.7 0.6 -50
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7126 Rev A
4-2004
33
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
5,000
APT1001R6BFLL_SFLL
Ciss
10 5
C, CAPACITANCE (pF)
100S
1,000
Coss 100 Crss
1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1mS 10mS
.1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 8A
200 100
12
VDS=200V VDS=500V
8
VDS=800V
TJ =+150C TJ =+25C 10
4
20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 40 35 30 td(off)
0
0
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40 35 30 tf
td(on) and td(off) (ns)
R
G
= 5
20 15 10 5 0 4
T = 125C
J
tr and tf (ns)
25
V
DD
= 667V
25 20 15 10 5 tr
V
DD G
L = 100H
= 667V
R
= 5
T = 125C
J
L = 100H
td(on)
10 12 14 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
6
8
10 12 14 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 500 Eon
SWITCHING ENERGY (J)
0
4
6
8
800
= 667V
R
= 5
T = 125C
J
SWITCHING ENERGY (J)
600
L = 100H E ON includes diode reverse recovery.
Eon
400
V
DD
= 667V
300
I
D J
= 8A
400
T = 125C
200
L = 100H E ON includes diode reverse recovery.
4-2004
200 Eoff 0 4 6 8 10 12 14
100 Eoff 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5
050-7126 Rev A
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT1001R6BFLL_SFLL
Gate Voltage
td(on) tr
90% 5% 10% Drain Current 5% Drain Voltage Switching Energy
td(off)
Drain Voltage 90%
T 125C J
tf
10% 0 Switching Energy Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7126 Rev A
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
4-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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